Advances in Ga2O3 Processing and Devices

Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. The high-power/high-voltage market is currently primarily served by Si and SiC devices. Ga2O3 is the leading candidate to address the ultra-high power market (>1kW). We will discuss recent progress in developing Ohmic contacts using interlayers of ITO or AZO, high density plasma etching using ICP discharges and the resultant etch rates, morphologies and near-surface damage, behavior of hydrogen incorporated during ion implantation or plasma exposure, measurement of band offsets with dielectrics and application of these processes to vertical and lateral transistor structures.