In-plane magnetization switching characteristics of energy-efficient strain-mediated nanomagnets assisted by the spin Hall effect at room temperature

•180° in-plane magnetization switching was achieved by Strain + SOT clock, whose energy dissipation is 4 orders of magnitude less than SOT clock.•At room temperature, the magnetization flip probability curve is obtained, which shows reasonable value range that voltage and current density used by clock.•A novel in-plane non-volatile Strain-mediated SOT-RAM was proposed, which can achieve separate writing operation.•Neural network based on lower energy strain + SOT spin neuron has ~0.98 recognition accuracy for recognizing handwritten digits.