Chemical Vapor Deposition of IrTe2 Thin Films

Two-dimensional (2D) IrTe(2)has a profound charge ordering and superconducting state, which is related to its thickness and doping. Here, we report the chemical vapor deposition (CVD) of IrTe(2)films using different Ir precursors on different substrates. The Ir(acac)(3)precursor and hexagonal boron nitride (h-BN) substrate is found to yield a higher quality of polycrystalline IrTe(2)films. Temperature-dependent Raman spectroscopic characterization has shown the q(1/8)phase to HT phase at similar to 250 K in the as-grown IrTe(2)films on h-BN. Electrical measurement has shown the HT phase to q(1/5)phase at around 220 K.