Modeling of the Impurity-Gradient Effect in High-Voltage MOSFETs

A. Tanaka,K. Fukushima, T. Sakuta, H. Kikuchihara,M. Miyake,H. J. Mattausch,M. Miura-Mattausch

NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2（2011）

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摘要

We have developed the compact model HiSIM_HV for high-voltage MOSFETs, based on the potential distribution in the device the laterally deffused MOSFET called LDMOS. Due to the impurity gradient, which is caused by the impurity diffusion process, an additional charge in the channel occurs and affects capacitances. By considering the electric field created by the impurity gradient, the model can reproduce observed capacitance characteristics.

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关键词

LDMOS,compact model,impurity gradient,surface potential,capacitance

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