Silicon Technologies for Nanoscale Device Packaging

We present our recent developments on silicon technologies dedicated to the packaging of nano-objects/nano-devices. These technologies aim at both protecting and electrically connecting a nanoscale device positioned on a perfect Si (001)-(2 x 1):H surface smoothed thanks to a 950 degrees C thermal treatment. The nano-device is connected to nanopads implanted on the silicon surface. Each nanopad is linked to a nanovia which is locally achieved by etching and filling processes operated in a FIB (Focused Ion Beam) equipment. Impacts of the FIB process on via morphology and properties are depicted. Nanopads are fabricated through the local implantation of arsenic, and the effect of the surface smoothing thermal treatment on the dopants diffusion length is estimated by simulation and then experimentally explored. Key process steps such as the etching of a deep cavity and the surface protection with a temporary cap are also described, and a first assembly consisting in a substrate equipped with nanopads and directly bonded with a cap substrate is presented.