Analysis of thin germanium-rich SiGe layers on Si(1 1 1) substrates grown by carbon-mediated epitaxy

In this work, we adapted the growth process of carbon-mediated epitaxy from Ge and SiGe layers on Si(0 0 1) for layers on Si(1 1 1). Using atomic force microscopy, it was possible to measure a surface roughness of less than 1 nm for all samples grown with a C submonolayer. The degree of relaxation and Ge content of the layers was obtained by X-ray diffraction in skew geometry due to the low thickness of the layers. The layers are between 20 nm and 40 nm thick and fully relaxed with a Ge content between 0.5更多