THE RESISTANCE SWITCHING PROPERTIES AND MECHANISM IN Ag/ZrO2/Ta SANDWICH STRUCTURE

The resistive memory device based on Ag/ZrO2/Ta structure was prepared by using the magnetron sputtering technique. The field emission scanning electron microscopy (FESEM) was applied to investigate the microstructure of device. The Raman spectra was obtained to characterize the ZrO2 structure. The measurement result of current-voltage (I-V) shows that the fabricated device exhibits stable bipolar resistive switching (RS) characteristics under room temperature. The underlying mechanism of resistive switching can be correlated with the trap-filled space-charge limited conduction (SCLC) and the trap distribution. The SET and RESET operation voltages shows little change distribution during repeated operations. The characteristics retention exhibits excellent. The achieved characteristics of the RS based on amorphous ZrO2 show as a promising candidate for nonvolatile memory applications.