Effects of TID radiation on P+ ion-implanted HVNMOS devices

This paper studied the effect of total ionizing dose (TID) radiation on 10 V high-voltage n-type metal-oxide-semiconductor (HVNMOS) devices. The study was conducted on two devices with P+ ion-implantation for radiation-hardening. Both devices were geared towards embedded applications, and ions were implanted into them through P+ ring and P+ sub implantation methods, separately. Leakage channels induced by TID radiation were analyzed to identify key leakage paths. Gate modulation effects, caused by P+ implantation in HVNMOS devices, were studied through gate voltage and junction voltage from drain/source (D/S) to substrate (B). It was uncovered that P+ ring ion implantation was most suitable for radiation-hardening in HVNMOS devices with TID irradiation of over 150 K rad (Si).