The surface morphology evolution of ZrSi2 films under different substrate temperature

Zr silicide (ZrSi2) films fabricated by the electron beam deposition (EBD) under different substrates temperature for the potential applications in the field of integrated circuit manufacturing. The surface morphology evolution of ZrSi2 films under different substrate temperature are characterized by scanning electron microscope (SEM), x-ray photoelectron spectroscopy (XPS) and the electron back-scattered diffraction (EBSD). The sheet resistance of ZrSi2 films are detected by the four-point probe method. In fact, the growth mechanism and physical proprieties of ZrSi2 films synthesized under such conditions are not clear. The work in this article can lead to the further understanding of the synthesis process of the ZrSi2 films. Consequently, more basic work need to be carried out for the future systematic researches.