Photoluminescence, scintillation properties and trap states of La2Si2O7Ce single crystal

Single crystal of La2Si2O7:Ce (LaPS:Ce) was successfully grown by floating zone method for the first time. The structure of as grown sample is confirmed to be monoclinic with space group P2(1)/c by x-ray diffraction and energy dispersive spectra. Its photoluminescence (PL) and scintillation properties of LaPS:Ce crystal were characterized through vacuum ultra-violet excitation and emission spectra, PL decay curve, x-ray excitation luminescence spectrum, gamma-ray multi-channel spectrum and afterglow spectrum. Emission peaks of this material are around 3.5 eV and 3.3 eV, corresponding to the typical transition 5d -> 4f of Ce3+. The PL decay time of LaPS:Ce is 29.3 ns. The light yield of the sample is determined to be about 5400 ph MeV-1 with a low afterglow level. The trap states in LaPS:Ce are also studied through the thermally stimulated luminescence measurement.