Effect of indium content on the characteristics of indium tin oxide thin films

Transparent IxT1-xO(x = 0 to 1) alloyed thin films were deposited by spray pyrolysis technique at a substrate temperature of 400 degrees C. The effect of incorporation of indium on structural, optical and electrical properties of tin oxide thin films were studied. Characterization of thin films was carried out using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDAX), UV-Visible absorption spectroscopy. XRD results revealed that IxT1-xO thin films were polycrystalline in nature with good crystallinity. Incorporation of indium effectively modifies the surface morphology of the films. The band gap was varied from 3.7 eV to 3 eV. Maximum electrical conductivity of 44.52 x 10(3) Omega(-1) m(-1) and transmittance of 90% is obtained for I0.5T0.5O films, hence can be used as highly transparent and conducting electrodes.