Optical properties of HfOx(x < 2) films grown by ion beam sputtering-deposition method

A. K. Gerasimova,V. Sh Aliev, V. N. Kruchinin, I. A. Badmaeva,V. A. Voronkovskii, S. G. Bortnikov

MATERIALS RESEARCH EXPRESS(2019)

引用 2|浏览2
暂无评分
摘要
The optical properties of the HfOx films of different chemical composition (x <= 2) deposited by ion beam sputtering-deposition (IBSD) method were studied. Spectral dependencies of refractive index n(lambda) and extinction coefficient k(lambda) were determined with ellipsometry in lambda = 250-1100 nm wavelength region. The xvalues (i.e. [O]/[Hf] ratio) for the films were derived from x-ray photoelectron spectroscopy (XPS) data. The spectral dependences of optical constants n(lambda) and k(lambda) were found to undergo radical changes with x = 1.78-1.82. The films with x < 1.78 demonstrated high extinction coefficient k > 1 with the metallic-like behavior of optical constants spectral dependences. The films with x > 1.82 were found to be transparent, with k = 0 and n(lambda) being well approximated by a Cauchy polynomial dependence for dielectrics. Using a sample with a gradient of x, it was established that the transition from the metallic to the dielectric-like behavior of the optical constants occurs not smoothly, but is discontinuous. A sharp jump in the optical constants is observed at x approximate to 1.8. According to XPS data, the transparent films were found to consist of two components only: HfO2 and Hf4O7 suboxide. Cauchy polynomial coefficients for Hf4O7 suboxide and HfO2 were found by using the Bruggeman effective medium approximation.
更多
查看译文
关键词
HfOx,ReRAM,spectroscopic ellipsometry,IBSD
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要