Mobility and threshold voltages comparison of zinc nitride-based thin-film transistor fabricated on Si and glass

The present work reports the fabrication and characterization of high mobility thin-film transistors, where zinc nitride is used as the active layer (similar to 100 nm thick). For the TFT, the active layer was deposited at room temperature on different substrates (Si-p type and glass) by RF magnetron sputtering method and annealed at 350 degrees C post-fabrication and HfO(2)was used as the gate insulation layer (similar to 50 nm thick). The obtained value of field-effect mobility was greater than 5 cm(2)Vs(-1), with optical bandgap similar to 3.07 eV. The two MIS (metal insulator semiconductor) structures were analyzed using I-V and C-V measurements. It is demonstrated that Zinc Nitride is a potential candidate to be used as an active layer in TFT fabrication. The threshold voltages of the device built on Si and glass substrates were obtained as 0.8 volts and 2.6 volts respectively.