Overview and Status of the 0.5-NA Micro-field Exposure Tool at Berkeley Lab
Proceedings of SPIE(2019)
摘要
A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamline 12.0.1.4 of the Advanced Light Source synchrotron facility at Lawrence Berkeley National Laboratory. Commissioning has demonstrated a patterning resolution of 13 nm half-pitch with annular 0.35 - 0.55 illumination; a patterning resolution of 8 nm half-pitch with annular 0.1 - 0.2 illumination; critical dimension (CD) uniformity of 0.7 nm 1 sigma on 16 nm nominal CD across 80% of the 200 um x 30 um aberration corrected field of view; aerial image vibration relative to the wafer of 0.75 nn RMS and focus control and focus stepping better than 15 nm.
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