Thermo-hydrodynamic transient modeling of vertical Bridgman growth
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS(2000)
摘要
Velocity and temperature fields in the growth of semiconductor by the vertical Bridgman method are studied by numerical modeling using the finite element code FIDAP. A free surface model is applied for the description of the transient process. Using the numerical results the solid-liquid interface evolution with time is discussed.
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关键词
vertical Bridgman growth,numerical simulation,transient analysis,interface deflection
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