Development and Application of InAsP/InPQuantum Well Infrared Detector

InAsxP1-x/InP quantum wells grown using metal organic vapor phase epitaxy are investigated for infrared detector applications. The structural parameters of the QWs are evaluated from high resolution x-ray diffraction. The electronic transition energies measured from surface photo voltage and photoconductivity confirms that these QWs can be used for fabricating IR detectors in the wide wavelength range, i.e. 0.9- 1.46 mu mby inter-band transitions and 7-18 mu m by inter-sub-band transitions. Subsequently the functionality of one such fabricated InAsxP1-x/InPQW detector is verified by measuring the photoluminescence of suitable semiconductor quantum well structure.