Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors

Christopher J Klingshirn,Asanka Jayawardena,Sarit Dhar,Rahul P Ramamurthy,Dallas Morisette,Zoey Warecki,John Cumings,Tsvetanka Zheleva,Aivars Lelis,Lourdes G Salamanca-Riba

Micron（2021）

引用 9|浏览25

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摘要

•Electron irradiation crystallizes amorphous alumina films on beta-gallium oxide.•The electron dose rate is correlated to the crystallization rate.•The small lattice mismatch is favorable for the nucleation of crystallites.•Crystallization is driven by ionization-induced atomic rearrangement, not heating.

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关键词

Gallium oxide,Alumina,Amorphous-crystalline transition,TEM,Electron irradiation,Radiolysis

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