GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

Chirantan Singha,Sayantani Sen,Alakananda Das,Anirban Saha,Pallabi Pramanik,Sudipta Bera,Rupa Mukhopadhyay,Anirban Bhattacharyya

Thin Solid Films（2020）

引用 5|浏览5

暂无评分

摘要

•GaN/AlN Multiple Quantum Wells were grown by Molecular Beam Epitaxy•For high III/V ratio Internal quantum efficiency (IQE) was below 10%•For reduced III/V ratio IQE was ~28% even for high dislocation densities•Reduction of III/V ratio generated faceted surfaces•Spontaneously grown nanostructures observed

查看译文

关键词

Molecular beam epitaxy,Group-III nitrides,Binary multiple quantum wells,Internal quantum efficiency

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要