Radiative recombination properties of near-stoichiometric CuInS e 2 thin films
Physical Review Materials(2020)
摘要
The properties of electronic defects and their relation to structural defects are of high relevance for CuInSe2 photovoltaic absorbers. Here, we use Raman scattering and steady-state photoluminescence to study the intrinsic optoelectronic properties of near-stoichiometric CuInSe2 samples with a lateral composition gradient around the Cu saturation point. Apart from a well-known shallow defect band at 0.97 eV, we also observe a deep defect band at 0.8 eV, which is not discernable in photoluminescence spectra at lower temperatures. The preparation of a laterally graded sample with a very precise relative composition range by in situ process control allows for a measurement of a significant decrease of the photoluminescence emission yield at the Cu-poor/Cu-rich transition on a very narrow composition scale. Possible assignments of the bands to structural point defects are discussed.
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