Fabrication and characterization of Cu2O/Cu-WO3 bilayers for lateral programmable metallization cells

•Oxidation kinetics of copper was characterized (Ea = 0.70 eV) at low temperatures.•Copper oxidized into cuprous oxide when annealed at low temperatures (125 °C–170 °C).•Activation energy of diffusion of copper in tungsten oxide is 0.74 eV.•TEM analysis of diffusion showed formation of copper clusters in tungsten oxide.•Use of a unique bilayer of Cu2O/Cu-WO3 in lateral PMC devices is presented.