Proposal of A Nonvolatile XNOR Logic-Gate Using Voltage-Control Spintronics Memory Cells For In-Memory Computing

2020 IEEE International Memory Workshop (IMW)(2020)

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摘要
This paper proposes a brand new non-volatile XNOR logic-gate that works as both a logic-gate and a nonvolatile memory. It can unify a micro-processor and a memory and it is expected that it saves energy consumption associated with data transfer and enhances band-width of data transfer between the devices.
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关键词
VoCSM,spin-Hall,VCMA,MRAM,In-memory computing
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