Light-induced bias stability of crystalline indium-tin-zinc-oxide thin film transistors

Solah Park,Kyung Park,Hojoong Kim,Hyun-Woo Park,Kwun-Bum Chung,Jang-Yeon Kwon

Applied Surface Science（2020）

引用 18|浏览12

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摘要

•The electrical characteristics of the amorphous and crystalline structures of the ITZO thin films are investigated.•The ITZO thin films are obtained crystalline structure after annealing at a temperature above 700 °C.•The crystalline ITZO TFTs have high reliability in off-state driving compared to the amorphous ITZO TFT.

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关键词

Oxide semiconductor,Crystallization,Indium-tin-zinc-oxide (ITZO),Thin film transistors (TFT),Stability

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