Study of the extended defects in CdZnTe crystal

Journal of Crystal Growth(2020)

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摘要
•Measuring tip trajectories of CdZnTe defect etch pits in real-time observation.•Extended defects are complex of multiple dislocation lines.•Extending direction distribution of defects were shown on [1 1 1] pole figure.•Nakagawa etchant cannot reveal large-angle orientated defects.
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关键词
A1. Line Defects,A1. Etching,A1. Characterization,B2. Semiconducting II-VI materials
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