Investigation of the anomalous hump phenomenon in amorphous InGaZnO thin-film transistors

Tong Teng,Chun-Feng Hu,Xin-Ping Qu,Mingxiang Wang

Solid-State Electronics（2020）

引用 6|浏览11

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摘要

•Positive charges from H2O molecule induced the parasitic current path, resulting in anomalous hump in subthreshold region at elevated temperature, which disappeared after N2 annealing.•Hump still existed under PBS, while weakened hump were observed under NBS due to positive charges trapping.

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关键词

Amorphous InGaZnO (a-IGZO),Thin-film transistor (TFT),Hump,Negative bias temperature instability (NBTI),Positive charges,Parasitic current path

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