An In-Module Disturbance Barrier for Mitigating Write Disturbance in Phase-Change Memory

IEEE Transactions on Computers(2023)

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摘要
Write disturbance error (WDE) appears as a serious reliability problem preventing phase-change memory (PCM) from general commercialization, and therefore several studies have been proposed to mitigate WDEs. Verify-and-correction (VnC) eliminates WDEs by always verifying the data correctness on neighbors after programming, but incurs significant performance overhead. Encoding-based schemes mitigate WDEs by reducing the number of WDE-vulnerable data patterns; however, mitigation performance notably fluctuates with applications. Moreover, encoding-based schemes still rely on VnC-based schemes. Cache-based schemes lower WDEs by storing data in a write cache, but it requires several megabytes of SRAM to significantly mitigate WDEs. Despite the efforts of previous studies, these methods incur either significant performance or area overhead. Therefore, a new approach, which does not rely on VnC-based schemes or application data patterns, is highly necessary. Furthermore, the new approach should be transparent to processors (i.e., in-module), because the characteristic of WDEs is determined by manufacturers of PCM products. In this paper, we present an in-module disturbance barrier (IMDB) that mitigates WDEs on demand. IMDB includes a two-level hierarchy comprising two SRAM-based tables, whose entries are managed with a dedicated replacement policy that sufficiently utilizes the characteristics of WDEs. The naive implementation of the replacement policy requires hundreds of read ports on SRAM, which is infeasible in real hardware; hence, an approximate comparator is also designed. We also conduct a rigorous exploration of architecture parameters to obtain a cost-effective design. The proposed method significantly reduces WDEs without noticeable speed degradation or additional energy consumption compared to previous methods.
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关键词
Phase change materials,Random access memory,Nonvolatile memory,Phase change memory,Performance evaluation,Media,Low latency communication,Phase-change Memory,non-volatile memory,write disturbance,in-module approach
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