Band-offsets of GaInAsBi–InP heterojunctions

V. Pačebutas,R. Norkus, V. Karpus, A. Geižutis, V. Strazdienė,S. Stanionytė,A. Krotkus

Infrared Physics & Technology（2020）

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摘要

•Terahertz excitation spectroscopy was used for determining band lineups in semiconductor heterojunctions.•Band offsets in heterojunctions between narrow gap semiconductor GaInAsBi and InP or GaInAs were determined.•Type II heterojunctions were predicted for both these cases.

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关键词

Band offsets,GaInAsBi bismides,THz emission spectroscopy

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