Optimized Strategies For Advancing N-Type Pbte Thermoelectrics: A Review
ACS APPLIED MATERIALS & INTERFACES(2020)
摘要
p-Type and n-type thermoelectric semiconductor materials with compatible performance are key components for thermoelectric devices. Great improvement in thermoelectric performance has been achieved in p-type PbTe, whereas the n-type counterpart still shows much inferior thermoelectric performance compared to that of the p-type PbTe. This inspires many strategies focused on advancing n-type PbTe thermoelectrics. Herein, not only effective mass engineering, resonance states, point defects, and nanostructures but also newly developed concepts including dynamic doping for stabilizing the optimal carrier concentration and introducing dislocations for reducing lattice thermal conductivity are summarized. In addition, the synergistic effects for further enhancing the thermoelectric performance are outlined, together with a discussion and outlook for boosting the advancement in n-type PbTe thermoelectric materials. Strategies discussed here are expected to be applicable to other thermoelectric materials.
更多查看译文
关键词
n-PbTe, carrier concentration, lattice thermal conductivity, mobility, Seebeck coefficient
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络