Method for plasma etching assisted laser processing of silicon carbide

The invention relates to a method for plasma etching assisted laser processing of silicon carbide, which comprises the following steps: carrying out rough processing and rapid removal on silicon carbide by using the irradiation ablation action of femtosecond laser on a material, removing impurities on the processed surface by using a mixed solution of hydrofluoric acid and nitric acid, and carrying out plasma etching fine processing to obtain an expected micro-nano structure. The method realizes high-efficiency high-quality material removal etching of silicon carbide, and has the advantages ofhigh processing efficiency, low cost, good processed surface quality and the like.