Recent Development in 2D and 3D GaN devices for RF and Power Electronics Applications

Koon Hoo Teo,Nadim Chowdhury,Yuhao Zhang,Tomas Palacios,Koji Yamanaka,Yutaro Yamaguchi

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)（2020）

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摘要

Some recent developments in 2D and 3D GaN devices and their improved performance parameters such as efficiency, fT, linearity, power density and switching speed are briefly outlined. Most of the cases briefed are for applications in RF with one example for power electronics and another for GaN integrated circuit.

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关键词

GaN,Semiconductor Devices,Integrated Circuits,2D and 3D Semiconductor Devices,RF,Power Electronics

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