Effects of Growth Temperature on Electrical Properties of GaN/AlN Based Resonant Tunneling Diodes with Peak Current Density Up to 1.01 MA/cm2Evan M. Cornuelle,Tyler A. Growden,David F. Storm,Elliott R. Brown,Weidong Zhang,Brian P. Downey,Vikrant Gokhale,Laura B. Ruppalt,James G. Champlain,Prudhvi Peri,Martha R. McCartney,David J. Smith,David J. Meyer,Paul R. BergerAIP ADVANCES（2020）引用 8|浏览66AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
