Scavenging of galvinoxyl spin 1/2 radicals in the processing of organic spintronics

In many cases of organic electronic devices, spin manipulation adopts galvinoxyl spin 1/2 radicals to achieve singlet-triplet transition for a change of spin ensembles. We report scavenging of galvinoxyl spin 1/2 radicals, both in liquid-galvinoxyl samples and in thermal processing of galvinoxyl-doped organic films, as determined by electron spin resonance and UV–Vis measurements. The two different mechanisms of galvinoxyl scavenging are very crucial in organic device processing that often encounters oxidation and high-temperature treatment (∼150 °C), in which situation most of the galvinoxyl frameworks cannot survive.