Impact of silicide process on eFuse programming, reliability and ruggedness in RF BiCMOS Technology

Alain Loiseau
Alain Loiseau
Yves Ngu
Yves Ngu
Ian Mcallum-Cook
Ian Mcallum-Cook

2019 30TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2019.

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Abstract:

0.35um SiGe BiCMOS wafers were fabricated using Ti, Co, Pt, and Ni salicide processes optimized for a range of CMOS technology nodes down to 90nm. On-wafer circuitry was used to program discrete eFuse elements to compare their pre and post programmed resistances and behavior during programming between each salicide process employed, with ...More

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