Impact Of Mg-Level On Lattice-Relaxation In P-Algan Hole Source Layer (Hsl) And Attempting Excimer Laser Annealing On P-Algan Hsl Of Uvb Emitters (Vol 32, 055702, 2021)

There is a small error in the conclusion to this article. The penultimate sentence wrongly refers to n-AlGaN, when it should be p-AlGaN. The correct sentence should read: Also, the hole-trap level appeared to have been effectively suppressed by laser treatment, and reasonably improved hole concentration up to 2×1016 cm-3 and the resistivity around 24 Ω.cm in the lightly polarized p-AlGaN HSL at RT was achieved.