1.3, 1.55 μm photodetector based on Ge/GaAs hetero-integration prepared by MOCVD

In this work, p-Ge/GaAs hetero-epitaxy was studied by MOCVD and a p-Ge/i-GaAs/n-GaAs photodetector structure was fabricated aiming at 1.3, 1.55 $\mu$m photodetection. The photo-response spectra indicate that the prepared device has quite good performance on dark current and signal on/off ratio, suggesting promising application in optical fiber communication.