PRINTABLE SEMICONDUCTOR STRUCTURE AND RELATED METHOD OF FABRICATION AND ASSEMBLY

Nuzo Ralph G, John A Rogers,Etienne Menard, Lee Keong Jae,Khang Dahl-Young,Sun Yugang,Matthew Meitl,Zhu Zhengtao, Ko Heung Cho,Mack Shawn

user-5ebe28ba4c775eda72abcdf3(2015)

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摘要
PROBLEM TO BE SOLVED: To provide a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations.SOLUTION: In a method for fabricating a printable semiconductor element, a silicon wafer 100 is heated to grow a thermal oxide layer 140 on a channel 110 and the external surface 120 thereof, a mask 150 is then deposited on a side surface of the channel 110 and the external surface using angled electron beam deposition, and a mask region 160 and a non-mask region 170 are formed on the silicon wafer. A channel depth 135 and a range of the mask region on the side surface of the channel define the thickness of a printable semiconductor ribbon 200 to be formed. Then, the non-mask region on the side surface of the channel is subjected to anisotropic etching along a direction of the silicon wafer to undercut a silicon wafer region between channels adjacent each other.
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关键词
Wafer,Undercut,Thermal oxide,Semiconductor structure,Semiconductor,Ribbon,Optoelectronics,Materials science,Fabrication,Communication channel
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