Sub-Bandgap Luminescence from Doped Polycrystalline and Amorphous Silicon Films and Its Application to Understanding Passivating-Contact Solar Cells
ACS APPLIED ENERGY MATERIALS(2018)
摘要
We report luminescence phenomena from doped polycrystalline silicon (poly-Si) films and their applications to study carrier transport properties in passivating-contact solar cells. Low-temperature luminescence spectra emitted from doped poly-Si layers are found to be very broad and stretched from the crystalline silicon (c-Si) luminescence peak to significantly lower energies. This suggests that these layers contain radiative defect levels whose energies are continuously distributed from the band edges to deep levels in the poly-Si bandgap. Moreover, photoinduced carriers inside poly-Si layers are found to be completely blocked by an ultrathin SiO interlayer (-4.3 nm). This demonstrates that there is no free-carrier coupling from poly-Si layers in practical passivating-contact solar cells. Finally, we demonstrate that the same principle can be applied to study carrier transport properties in hydrogenated amorphous silicon films.
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关键词
luminescence,polycrystalline silicon,amorphous silicon,passivating contacts,solar cells,sub-bandgap
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