Amorphous MoS2 Photodetector with Ultra-Broadband Response

Photodetectors with the ability to detect light over a broad spectral range at room temperature (RT) are attracting considerable attention because of their wide range of potential applications in electronic and optoelectronic devices. In this work, an ultrabroadband photodetector design based on amorphous MoS2 (a-MoS2) prepared by magnetron sputtering is reported for the first time. In association with a narrow bandgap of 0.196 eV that originated from defects, these devices have realized an ultrabroadband photodetection range from 473 to 2712 nm with photoresponsivity as high as 47.5 mA W-1, which is comparable with most existing broadband photodetectors. Unlike many other photodetec- tors, which require complex manufacturing processes and rare photoactive materials that are difficult to obtain or fabricate, the amorphous MoS2 photodetector based on the magnetron sputtering technique offers easy and rapid fabrication, ultralow cost, a large-scale manufacturing capability, no detrimental effects on the environment or humans, and compatibility with semiconductor processing. These advantages indicate that the proposed photodetector has significant potential for electronic and optoelectronic applications and offers a new path for development of ultrabroadband photodetectors.