Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs

Chaymaa Haloui, Gaëtan Toulon,Josiane Tasselli,Yvon Cordier,Éric Frayssinet,Karine Isoird,Frédéric Morancho, Mathieu Gavelle

2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)（2020）

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摘要

A new normally-off AlGaN/GaN HEMT structure is proposed. The regrowth of a P-GaN layer on the AlGaN/GaN heterostructure after the gate recess allows the achievement of the enhancement mode. A shift in the threshold voltage to positive values has been proved through simulation results. A precise control of the etch depth for the gate recess is detailed.

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关键词

HEMT,normally-off,AlGaN/GaN,gate recess,RIE,P-GaN regrowth

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