15 kV SiC MOSFET: An enabling technology for medium voltage solid state transformers
CPSS Transactions on Power Electronics and Applications(2017)
摘要
Due to much higher achievable blocking voltage and faster switching speed, power devices based on wide bandgap (WBG) silicon carbide (SiC) material are ideal for medium voltage (MV) power electronics applications. For example, a 15 kV SiC MOSFET allows a simple and efficient two-level converter configuration for a 7.2 kV solid state transformer (SST) for smart grid applications. Compared with mult...
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关键词
Silicon carbide,MOSFET,Switches,Insulated gate bipolar transistors,Quality of service,Switching frequency
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