Study on Inter Band and Inter Sub-Band Optical Transitions With Varying InAs/InGaAs Sub-Monolayer Quantum Dot Heterostructure Stacks Grown by Molecular Beam Epitaxy

Saranya Reddy Shriram,Ravindra Kumar,Debiprasad Panda,Jhuma Saha,Binita Tongbram,Manas Ranjan Mantri,Sanowar Alam Gazi,Arjun Mandal,Subhananda Chakrabarti

IEEE Transactions on Nanotechnology（2020）

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摘要

Multiple stacking of sub-monolayer (SML) quantum dot (QD) heterostructure exhibits high optical quality and is seen in devices like lasers diodes, photodetectors, etc. In this study, we have investigated the optical and material characterization of InAs/InGaAs SML quantum dot (QD) heterostructure with multiple stacking layers (nSML) on GaAs substrates. The experimentally calculated PL emission ene...

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关键词

Strain,Gallium arsenide,Temperature measurement,Stacking,Photoluminescence,Photodetectors,Substrates

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