Corrections to “First-Order Piezoresistive Coefficients of Lateral NMOS FETs on 4H Silicon Carbide”

We recently realized that the basic piezoresistivity matrix for 4H-SiC in the above paper [1] was not correct [2], [3]. The matrix and subsequent results are corrected here, and the section and equation numbers utilized here correspond to those in the original paper [1].