Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System
IEEE Journal of the Electron Devices Society（2020）
摘要
Previous studies have suggested that the operating voltage and energy-delay properties of a nanoelectromechanical (NEM) system can be improved using the negative capacitance (NC) effect of ferroelectric materials. However, the advantages of using the NC effects alone have been utilized for perovskite ferroelectric materials, which is incompatible in complementary metal-oxide-semiconductor (CMOS) f...
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关键词
Nanoelectromechanical systems,Ferroelectric materials,Hafnium compounds,Switches,Iron,Electron devices,Fabrication
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