Accurate Modeling of the Capacitance of Through-Silicon Via Considering Minority Carrier Effects
IEEE Transactions on Components, Packaging and Manufacturing Technology(2020)
摘要
The 3-D integration of integrated circuits based on through-silicon via (TSV) is a promising technology to achieve high-performance, multifunctional, and heterogeneous microsystem. The voltage-dependent and frequency-dependent TSV capacitances have a predominant impact on system performance. Accordingly, accurate electrical modeling of TSV capacitance is critical for system design. This article pr...
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关键词
Capacitance,Through-silicon vias,Integrated circuit modeling,Mathematical model,Silicon,Computational modeling,Analytical models
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