2D SiC/Si Structure: Electron States and Adsorbability

Semiconductors(2020)

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摘要
A model of a heterostructure consisting of a silicon-carbide single layer formed on a massive silicon substrate is proposed. The problem of the adsorption of alkali metal atoms and halogen atoms on the carbon and silicon surface atoms of a 2D SiC/Si heterostructure is considered. Analytical estimates for charge transfer and the adsorption energy are reported.
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关键词
two-dimensional hexagonal layers,semiconductor substrate,density of states,adsorption
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