Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation
Semiconductors(2019)
摘要
The initial stages of planar self-catalyzed GaAs nanowire growth via the vapor-liquid-solid mechanism are considered by a kinetic lattice Monte Carlo model. The shapes of the nanocrystals being formed under a catalyzed droplet are presented for three GaAs substrate orientations (111)A, (111)B, (001). The most stable planar GaAs nanowire growth was observed on GaAs(111)A substrates.
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关键词
simulation,Monte Carlo,planar nanowire,GaAs
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