3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination
IEEE Electron Device Letters(2020)
摘要
This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of
$115~\Omega $
/sq. A novel edge termination based on regrown p-GaN is proposed to manage the electric field crowding in the Schottky contact region. A new self-aligned Ohmic process is developed to form sidewall contact to all five channels in a single lithography step. The fabricated lateral SBDs with a breakdown voltage (
BV
) of 1.65, 2.55, and 3.35 kV show a Baliga’s figure of merit of 3.1, 3.5, and 3.6 GW/cm
2
, respectively, which are the highest among all the similarly-rated power SBDs to date. Based on experimental results, the practical limits of multi-channel AlGaN/GaN lateral devices were found to reach the theoretical vertical GaN limit at a
BV
over ±2 kV. This suggests the great promise of multi-channel AlGaN/GaN lateral devices for medium- and high-voltage power applications.
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关键词
Gallium nitride,Schottky diodes,multi-channel,edge termination,self-align,high voltage,power devices
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