Theory and Design of Electron Blocking Layers for III-N-Based Laser Diodes by Numerical Simulation

IEEE Journal of Quantum Electronics(2018)

引用 14|浏览35
暂无评分
摘要
Although both III-N laser diodes (LDs) and LEDs employ electron blocking layers (EBLs) to reduce electron leakage from the active region, LDs typically operate at far higher current densities than LEDs. Shortcomings of the common rectangular EBL are discussed. Two alternative EBL designs have been systematically studied using numerical simulation: the inverse-tapered EBL and the inverse-tapered st...
更多
查看译文
关键词
Vertical cavity surface emitting lasers,Light emitting diodes,Current density,Diode lasers,Mathematical model,Charge carrier processes,Numerical simulation
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要