Modelling Of Compact Models of Carbon Nanotube Field Effect Transistors with VHDL-AMS

This paper related to modelling and simulation of the carbon nanotube field effect transistor (CNTFET). There are two compact models for CNTFET’s, the first which behaves like a MOSFET is known as the classical behaviour model and the other one is schottky barrier CNTFET is known as ambipolarbehaviourmodel . Like MOSFET devices these models implemented in VHDL-AMS. MOSFETs are modelled in VHDL which is a hardware description language and results are simulated on the simulators. CNTFET models are implemented on VHDL-AMS and have been compared with numerical simulation.