First demonstration of 300 mm InGaAs-On-Insulator substrates fabricated using the Smart Cut technology

This paper reports the first demonstration of 300 mm In 0.53Ga0.47As-on-insulator substrates. The use of the Smart Cut technology leads to the transfer of high quality InGaAs layer on large Si wafer size (300 mm) at low effective cost, considering the reclaim of the IIIV on Si donor substrate. The optimization of the three key features of this technology is detailed: 1. The III-V epitaxial growth on 300 mm Si wafer 2. The hydrogen-induced thermal splitting in the epitaxial InP layer 3. The specifi c direct wafer bonding with alumina oxide.