V-2 AlGaN / GaN HEMT high-power and low-noise performance atf > 20 GHz

In this paper, we report on the power and noise performance of A1GaN/GaN HEMTs in the K (18 27 GHz) band. At 20 GHz, a record CW output power of 2 W with an associated gain of 8 dB and PAE of 33 % has been achieved on a 8-finger 0.2 pm x 500 gm device. Minimum noise figure of 1.4 dB has been achieved on a 0.15 gm x 200 gm device at 26 GHz. The data demonstrate the viability of AIGaN/GaN HEMTs for high-frequency power and LNA applications.